存储器ic 高速sram VTI504NL16

SRAM存储器不需要通过刷新电路就可以保存它内部存储的数据。而DRAM存储器需要一定的时间不断刷新充电，不然内部的数据会丢失，从而可以看出SRAM芯片的性能比较高，功耗也相对较小，但是SRAM也有它的缺点，即它的集成度较低，相同容量的DRAM内存可以设计为较小的体积，但是SRAM却需要很大的体积。同样面积的硅片可以做出更大容量的DRAM，因此SRAM显得更贵。

Density	Org.	Temp.	Vcc(V)	Speed(ns)	C/S Option	Package	Packing	Status	P/N
1Mbit	128K x 8	Industrial	3.3	45/55	2C/S	32sTSOP1/32TSOP1/32SOP	Tray	MP	VTI501NB08
1Mbit	128K x 8	Industrial	5.0	45/55	2C/S	32sTSOP1/32TSOP1/32SOP	Tray	MP	VTI501HB08
1Mbit	64K x 16	Industrial	3.3	45/55	1C/S	44TSOP2/48BGA	Tray	MP	VTI501NL16
1Mbit	64K x 16	Industrial	5.0	45/55	1C/S	44TSOP2/48BGA	Tray	MP	VTI501HL16
2Mbit	256K x 8	Industrial	3.3	45/55	1C/S	36BGA	Tray	MP	VTI502NL08
2Mbit	256K x 8	Industrial	3.3	45/55	2C/S	32sTSOP1/32TSOP1/32TSOP2/32SOP	Tray	MP	VTI502NB08
2Mbit	256K x 8	Industrial	5.0	45/55	2C/S	32sTSOP1/32TSOP1/32TSOP2/32SOP	Tray	MP	VTI502HB08
2Mbit	128K x 16	Industrial	3.3	45/55	1C/S	44TSOP2/48BGA	Tray	MP	VTI502NL16
2Mbit	128K x 16	Industrial	3.3	45/55	2C/S	48BGA	Tray	MP	VTI502NB16
2Mbit	128K x 16	Industrial	5.0	45/55	1C/S	44TSOP2	Tray	MP	VTI502HL16
4Mbit	512K x 8	Industrial	3.3	45/55	1C/S	32sTSOP1/32TSOP1/32TSOP2/32SOP	Tray	MP	VTI504NL08
4Mbit	512K x 8	Industrial	5.0	45/55	1C/S	32sTSOP1/32TSOP1/32TSOP2/32SOP	Tray	MP	VTI504HL08
4Mbit	256K x 16	Industrial	3.3	45/55	1C/S	44TSOP2/48BGA	Tray	MP	VTI504NL16
4Mbit	256K x 16	Industrial	3.3	45/55	2C/S	44TSOP2/48BGA	Tray	MP	VTI504NB16
4Mbit	256K x 16	Industrial	5.0	45/55	1C/S	44TSOP2	Tray	MP	VTI504HL16
4Mbit	256K x 16	Industrial	5.0	45/55	2C/S	44TSOP2	Tray	MP	VTI504HB16
8Mbit	1M x 8	Industrial	3.3	45/55	2C/S	44TSOP2/48BGA	Tray	MP	VTI508NB08
8Mbit	1M x 8	Industrial	5.0	45/55	2C/S	44TSOP2/48BGA	Tray	MP	VTI508HB08
8Mbit	512K x 16	Industrial	3.3	45/55	1C/S	44TSOP2/48BGA	Tray	MP	VTI508NL16
8Mbit	512K x 16	Industrial	3.3	45/55	2C/S	44TSOP2/48BGA	Tray	MP	VTI508NB16
8Mbit	512K x 16	Industrial	5.0	45/55	1C/S	44TSOP2/48BGA	Tray	MP	VTI508HL16
8Mbit	512K x 16	Industrial	5.0	45/55	2C/S	48BGA	Tray	MP	VTI508HB16
16Mbit	1M x 16	Industrial	3.3	45/55	2C/S	48BGA	Tray	MP	VTI516NB16