SRAM存储器 S6R8016W1A

SRAM存储器 S6R8016W1A

SRAM存储器主要有一下特点：
1. 存储容量： 存储单元个数M×每单元位数N
2. 存取时间：从启动读(写)操作到操作完成的时间
3. 存取周期：两次独立的存储器操作所需间隔的较小时间
4. 平均故障间隔时间MTBF（可靠性）
5. 功耗：动态功耗、静态功耗

Density	Org.	Part number	Vdd(V)	Access Time	Package
32Mb	4Mx8	S6R3208W1M	1.65~3.6	8/10/12/15ns	48FBGA
32Mb	2Mx16	S6R3216W1M	1.65~3.6V	8/10/12/15ns	48FBGA
16Mb	2Mx8	S6R1608W1M	1.65~3.6V	8/10/12/15ns	44TSOP2 48FBGA
16Mb	2Mx8	S6R1608V1M	3.3V	8/10ns	44TSOP2 48FBGA
16Mb	2Mx8	S6R1608C1M	5V	10ns	44TSOP2 48FBGA
16Mb	1Mx16	S6R1616W1M	1.65~3.6V	8/10/12/15ns	48TSOP1 48FBGA
16Mb	1Mx16	S6R1616V1M	3.3V	8/10ns	48TSOP1 48FBGA
16Mb	1Mx16	S6R1616C1M	5V	10ns	48TSOP1 48FBGA
8Mb	1Mx8	S6R8008W1A	1.65~3.6V	8/10/12/15ns	44TSOP2 48FBGA
8Mb	1Mx8	S6R8008C1A	5V	10ns	44TSOP2 48FBGA
8Mb	512Kx16	S6R8016W1A	1.65~3.6V	8/10/12/15ns	44TSOP2 48FBGA
8Mb	512Kx16	S6R8016C1A	5V	10ns	44TSOP2 48FBGA
4Mb	512Kx8	S6R4008W1A	1.65~3.6	8/10/12/15ns	44TSOP2 36FBGA
4Mb	512Kx8	S6R4008V1A	3.3V	8/10ns	44TSOP2 36FBGA
4Mb	512Kx8	S6R4008C1A	5V	10ns	44TSOP2 36FBGA
4Mb	256Kx16	S6R4016W1A	1.65~3.6V	8/10/12/15ns	44TSOP2 48FBGA
4Mb	256Kx16	S6R4016V1A	3.3V	8/10ns	44TSOP2 48FBGA
4Mb	256Kx16	S6R4016C1A	5V	10ns	44TSOP2 48FBGA
2Mb	256Kx8	S6R2008W1A	1.65~3.6V	8/10/12/15ns	44TSOP2 36FBGA
2Mb	256Kx8	S6R2008V1A	3.3V	8/10ns	44TSOP2 36FBGA
2Mb	256Kx8	S6R2008C1A	5V	10ns	44TSOP2 36FBGA
2Mb	128Kx16	S6R2016W1A	1.65~3.6V	8/10/12/15ns	44TSOP2 48FBGA
2Mb	128Kx16	S6R2016V1A	3.3V	8/10ns	44TSOP2 48FBGA
2Mb	128Kx16	S6R2016C1A	5V	10ns	44TSOP2 48FBGA
1Mb	128Kx8	S6R1008W1A	1.65~3.6V	8/10/12/15ns	32sTSOP1 36FBGA
1Mb	128Kx8	S6R1008C1A	5V	10ns	32sTSOP1 36FBGA
1Mb	64Kx16	S6R1016C1A	5V	10ns	44TSOP2 48FBGA
1Mb	64Kx16	S6R1016W1A	1.65~3.6V	8/10/12/15ns	44TSOP2 48FBGA
1Mb	64Kx16	S6R1016V1A	3.3V	8/10ns	44TSOP2 48FBGA
1Mb	128Kx8	S6R1008V1A	3.3V	8/10ns	32sTSOP1 36FBGA