spi sram 芯片 S6R2008W1A 半导体存储器(semi-conductor memory)是一种以半导体电路作为存储媒体的存储器,内存储器就是由称为存储器芯片的半导体集成电路组成。 Density Org. Part number Vdd(V) Access Time Package 32Mb 4Mx8 S6R3208W1M 1.65~3.6 8/10/12/15ns 48FBGA 32Mb 2Mx16 S6R3216W1M 1.65~3.6V 8/10/12/15ns 48FBGA 16Mb 2Mx8 S6R1608W1M 1.65~3.6V 8/10/12/15ns 44TSOP2 48FBGA 16Mb 2Mx8 S6R1608V1M 3.3V 8/10ns 44TSOP2 48FBGA 16Mb 2Mx8 S6R1608C1M 5V 10ns 44TSOP2 48FBGA 16Mb 1Mx16 S6R1616W1M 1.65~3.6V 8/10/12/15ns 48TSOP1 48FBGA 16Mb 1Mx16 S6R1616V1M 3.3V 8/10ns 48TSOP1 48FBGA 16Mb 1Mx16 S6R1616C1M 5V 10ns 48TSOP1 48FBGA 8Mb 1Mx8 S6R8008W1A 1.65~3.6V 8/10/12/15ns 44TSOP2 48FBGA 8Mb 1Mx8 S6R8008C1A 5V 10ns 44TSOP2 48FBGA 8Mb 512Kx16 S6R8016W1A 1.65~3.6V 8/10/12/15ns 44TSOP2 48FBGA 8Mb 512Kx16 S6R8016C1A 5V 10ns 44TSOP2 48FBGA 4Mb 512Kx8 S6R4008W1A 1.65~3.6 8/10/12/15ns 44TSOP2 36FBGA 4Mb 512Kx8 S6R4008V1A 3.3V 8/10ns 44TSOP2 36FBGA 4Mb 512Kx8 S6R4008C1A 5V 10ns 44TSOP2 36FBGA 4Mb 256Kx16 S6R4016W1A 1.65~3.6V 8/10/12/15ns 44TSOP2 48FBGA 4Mb 256Kx16 S6R4016V1A 3.3V 8/10ns 44TSOP2 48FBGA 4Mb 256Kx16 S6R4016C1A 5V 10ns 44TSOP2 48FBGA 2Mb 256Kx8 S6R2008W1A 1.65~3.6V 8/10/12/15ns 44TSOP2 36FBGA 2Mb 256Kx8 S6R2008V1A 3.3V 8/10ns 44TSOP2 36FBGA 2Mb 256Kx8 S6R2008C1A 5V 10ns 44TSOP2 36FBGA 2Mb 128Kx16 S6R2016W1A 1.65~3.6V 8/10/12/15ns 44TSOP2 48FBGA 2Mb 128Kx16 S6R2016V1A 3.3V 8/10ns 44TSOP2 48FBGA 2Mb 128Kx16 S6R2016C1A 5V 10ns 44TSOP2 48FBGA 1Mb 128Kx8 S6R1008W1A 1.65~3.6V 8/10/12/15ns 32sTSOP1 36FBGA 1Mb 128Kx8 S6R1008C1A 5V 10ns 32sTSOP1 36FBGA 1Mb 64Kx16 S6R1016C1A 5V 10ns 44TSOP2 48FBGA 1Mb 64Kx16 S6R1016W1A 1.65~3.6V 8/10/12/15ns 44TSOP2 48FBGA 1Mb 64Kx16 S6R1016V1A 3.3V 8/10ns 44TSOP2 48FBGA 1Mb 128Kx8 S6R1008V1A 3.3V 8/10ns 32sTSOP1 36FBGA