sram芯片属于静态随机存储器,一般用于中高端的产品,体积小、存储速度快、存储密度高、与逻辑电路接口容易。 SRAM主要用于二级高速缓存(Level2 Cache)。它利用晶体管来存储数据。与DRAM相比,SRAM的速度快,但在相同面积中SRAM的容量要比其他类型的内存小。SRAM的速度快但昂贵,一般用小容量的SRAM作为更高速CPU和较低速DRAM 之间的缓存(cache).SRAM也有许多种,如AsyncSRAM (Asynchronous SRAM,异步SRAM)、Sync SRAM (Synchronous SRAM,同步SRAM)、PBSRAM (Pipelined Burst SRAM,流水式突发SRAM),还有INTEL没有公布细节的CSRAM等。 Density Org. Part Number Vcc Speed(ns) Pkg(Pins) 32Mb 2Mx16 IS64WV204816BLL 2.4-3.6V 12 TSOP1(48),BGA(48) 32Mb 2Mx16 IS61WV204816ALL/BLL 1.65-3.6V 10,12 TSOP1(48),BGA(48) 16Mb 2Mx8 IS64WV20488BLL 2.4-3.6V 10 TSOP2(44),BGA(48) 16Mb 2Mx8 IS62WV20488ALL/BLL 1.65-3.6V 25,35 TSOP2(44),BGA(48) 16Mb 2Mx8 IS61WV20488ALL/BLL 1.65-3.6V 8,10,20 TSOP2(44),BGA(48) 16Mb 1Mx16 IS64WV102416DBLL 2.4-3.6V 12 TSOP1(48),BGA(48) 16Mb 1Mx16 IS64WV102416BLL 2.4-3.6V 10 TSOP1(48),BGA(48) 16Mb 1Mx16 IS61WV102416DALL/BLL 2.4~3.6 10 TSOP1(48),BGA(48) 16Mb 1Mx16 IS62WV102416ALL/BLL 1.65-3.6V 25,35 TSOP1(48),BGA(48) 16Mb 1Mx16 IS61WV102416ALL/BLL 1.65-3.6V 8,10,20 TSOP1(48),BGA(48) 16Mb 1Mx16 IS61WV102416EDALL/BLL 2.4~3.6 10 TSOP1(48),BGA(48) 16Mb 512Kx32 IS61WV51232ALL/BLL 1.65-3.6V 8,10,20 BGA(90) 8Mb 1Mx8 IS61WV10248ALL/BLL 1.65-3.6V 8,10,20 TSOP2(44),BGA(48) 8Mb 1Mx8 IS61WV10248EDBLL 2.4-3.6V 8,10,20 TSOP2(44),BGA(48) 8Mb 512Kx16 IS64WV51216EDBLL 2.4-3.6V 10 TSOP2(44),BGA(48) 8Mb 512Kx16 IS61WV51216ALL/BLL 1.65-3.6V 8,10,20 TSOP2(44),BGA(48) 8Mb 512Kx16 IS61WV51216EDALL/BLL 1.65-3.6V 8,10,20 TSOP2(44),BGA(48) 8Mb 256Kx32 IS61WV25632ALL/BLL 1.65-3.6V 8,10,20 BGA(90) 4Mb 512Kx8 IS61C5128AL 5V 10,12 SOJ(36),TSOP2(44) 4Mb 512Kx8 IS61C5128AS 5V 25ns SOP(36),sTSOP1(32),TSOP2(32) 4Mb 512Kx8 IS61WV5128ALL/BLL 1.65-3.6V 8,10,20 SOJ(36),TSOP2(44),BGA(36)