SRAM存储器 LPSRAM VTI501HB08

静态随机存取存储器SRAM不需要刷新电路即能保存它内部存储的数据。而DRAM（Dynamic Random Access Memory)每隔一段时间，要刷新充电一次，否则内部的数据即会消失，因此静态随机存取存储器SRAM具有较高的性能，功耗较小，适用于纽扣电池供电的高速和**低功耗的应用,如手持式扫描仪、掌上电脑、多功能蜂窝电话、机顶盒和WLAN等。

Density	Org.	Temp.	Vcc(V)	Speed(ns)	C/S Option	Package	Packing	Status	P/N
1Mbit	128K x 8	Industrial	3.3	45/55	2C/S	32sTSOP1/32TSOP1/32SOP	Tray	MP	VTI501NB08
1Mbit	128K x 8	Industrial	5.0	45/55	2C/S	32sTSOP1/32TSOP1/32SOP	Tray	MP	VTI501HB08
1Mbit	64K x 16	Industrial	3.3	45/55	1C/S	44TSOP2/48BGA	Tray	MP	VTI501NL16
1Mbit	64K x 16	Industrial	5.0	45/55	1C/S	44TSOP2/48BGA	Tray	MP	VTI501HL16
2Mbit	256K x 8	Industrial	3.3	45/55	1C/S	36BGA	Tray	MP	VTI502NL08
2Mbit	256K x 8	Industrial	3.3	45/55	2C/S	32sTSOP1/32TSOP1/32TSOP2/32SOP	Tray	MP	VTI502NB08
2Mbit	256K x 8	Industrial	5.0	45/55	2C/S	32sTSOP1/32TSOP1/32TSOP2/32SOP	Tray	MP	VTI502HB08
2Mbit	128K x 16	Industrial	3.3	45/55	1C/S	44TSOP2/48BGA	Tray	MP	VTI502NL16
2Mbit	128K x 16	Industrial	3.3	45/55	2C/S	48BGA	Tray	MP	VTI502NB16
2Mbit	128K x 16	Industrial	5.0	45/55	1C/S	44TSOP2	Tray	MP	VTI502HL16
4Mbit	512K x 8	Industrial	3.3	45/55	1C/S	32sTSOP1/32TSOP1/32TSOP2/32SOP	Tray	MP	VTI504NL08
4Mbit	512K x 8	Industrial	5.0	45/55	1C/S	32sTSOP1/32TSOP1/32TSOP2/32SOP	Tray	MP	VTI504HL08
4Mbit	256K x 16	Industrial	3.3	45/55	1C/S	44TSOP2/48BGA	Tray	MP	VTI504NL16
4Mbit	256K x 16	Industrial	3.3	45/55	2C/S	44TSOP2/48BGA	Tray	MP	VTI504NB16
4Mbit	256K x 16	Industrial	5.0	45/55	1C/S	44TSOP2	Tray	MP	VTI504HL16
4Mbit	256K x 16	Industrial	5.0	45/55	2C/S	44TSOP2	Tray	MP	VTI504HB16
8Mbit	1M x 8	Industrial	3.3	45/55	2C/S	44TSOP2/48BGA	Tray	MP	VTI508NB08
8Mbit	1M x 8	Industrial	5.0	45/55	2C/S	44TSOP2/48BGA	Tray	MP	VTI508HB08
8Mbit	512K x 16	Industrial	3.3	45/55	1C/S	44TSOP2/48BGA	Tray	MP	VTI508NL16
8Mbit	512K x 16	Industrial	3.3	45/55	2C/S	44TSOP2/48BGA	Tray	MP	VTI508NB16
8Mbit	512K x 16	Industrial	5.0	45/55	1C/S	44TSOP2/48BGA	Tray	MP	VTI508HL16
8Mbit	512K x 16	Industrial	5.0	45/55	2C/S	48BGA	Tray	MP	VTI508HB16
16Mbit	1M x 16	Industrial	3.3	45/55	2C/S	48BGA	Tray	MP	VTI516NB16