Low Power低功耗SRAM VTI502HL16

SRAM存储器主要有一下特点：
1. 存储容量： 存储单元个数M×每单元位数N
2. 存取时间：从启动读(写)操作到操作完成的时间
3. 存取周期：两次独立的存储器操作所需间隔的较小时间
4. 平均故障间隔时间MTBF（可靠性）
5. 功耗：动态功耗、静态功耗

Density	Org.	Temp.	Vcc(V)	Speed(ns)	C/S Option	Package	Packing	Status	P/N
1Mbit	128K x 8	Industrial	3.3	45/55	2C/S	32sTSOP1/32TSOP1/32SOP	Tray	MP	VTI501NB08
1Mbit	128K x 8	Industrial	5.0	45/55	2C/S	32sTSOP1/32TSOP1/32SOP	Tray	MP	VTI501HB08
1Mbit	64K x 16	Industrial	3.3	45/55	1C/S	44TSOP2/48BGA	Tray	MP	VTI501NL16
1Mbit	64K x 16	Industrial	5.0	45/55	1C/S	44TSOP2/48BGA	Tray	MP	VTI501HL16
2Mbit	256K x 8	Industrial	3.3	45/55	1C/S	36BGA	Tray	MP	VTI502NL08
2Mbit	256K x 8	Industrial	3.3	45/55	2C/S	32sTSOP1/32TSOP1/32TSOP2/32SOP	Tray	MP	VTI502NB08
2Mbit	256K x 8	Industrial	5.0	45/55	2C/S	32sTSOP1/32TSOP1/32TSOP2/32SOP	Tray	MP	VTI502HB08
2Mbit	128K x 16	Industrial	3.3	45/55	1C/S	44TSOP2/48BGA	Tray	MP	VTI502NL16
2Mbit	128K x 16	Industrial	3.3	45/55	2C/S	48BGA	Tray	MP	VTI502NB16
2Mbit	128K x 16	Industrial	5.0	45/55	1C/S	44TSOP2	Tray	MP	VTI502HL16
4Mbit	512K x 8	Industrial	3.3	45/55	1C/S	32sTSOP1/32TSOP1/32TSOP2/32SOP	Tray	MP	VTI504NL08
4Mbit	512K x 8	Industrial	5.0	45/55	1C/S	32sTSOP1/32TSOP1/32TSOP2/32SOP	Tray	MP	VTI504HL08
4Mbit	256K x 16	Industrial	3.3	45/55	1C/S	44TSOP2/48BGA	Tray	MP	VTI504NL16
4Mbit	256K x 16	Industrial	3.3	45/55	2C/S	44TSOP2/48BGA	Tray	MP	VTI504NB16
4Mbit	256K x 16	Industrial	5.0	45/55	1C/S	44TSOP2	Tray	MP	VTI504HL16
4Mbit	256K x 16	Industrial	5.0	45/55	2C/S	44TSOP2	Tray	MP	VTI504HB16
8Mbit	1M x 8	Industrial	3.3	45/55	2C/S	44TSOP2/48BGA	Tray	MP	VTI508NB08
8Mbit	1M x 8	Industrial	5.0	45/55	2C/S	44TSOP2/48BGA	Tray	MP	VTI508HB08
8Mbit	512K x 16	Industrial	3.3	45/55	1C/S	44TSOP2/48BGA	Tray	MP	VTI508NL16
8Mbit	512K x 16	Industrial	3.3	45/55	2C/S	44TSOP2/48BGA	Tray	MP	VTI508NB16
8Mbit	512K x 16	Industrial	5.0	45/55	1C/S	44TSOP2/48BGA	Tray	MP	VTI508HL16
8Mbit	512K x 16	Industrial	5.0	45/55	2C/S	48BGA	Tray	MP	VTI508HB16
16Mbit	1M x 16	Industrial	3.3	45/55	2C/S	48BGA	Tray	MP	VTI516NB16